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| SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 2 - APRIL 2000 ZDT1053 C1 C1 C2 C2 PARTMARKING DETAIL T1053 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Tj:Tstg VALUE 150 75 5 20 5 500 -55 to +150 UNIT V V V A A mA C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 363 ZDT1053 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES MIN. 150 150 75 150 5 TYP. 245 245 100 245 8.8 0.3 0.3 0.3 17 70 120 150 300 1100 1000 260 300 150 30 420 450 220 50 15 140 21 90 750 30 10 10 10 25 100 150 200 440 1200 1100 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100A IC=100A IC=10mA IC=100A, VEB=1V IE=100A VCB=120V VEB=4V VCES=120V IC=0.2A, IB=20mA* IC=1A, IB=50mA* IC=1A, IB=10mA* IC=2A, IB=50mA* IC=5A, IB=250mA* IC=5A, IB=250mA* IC=5A, VCE=2V* IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* MHz pF ns ns IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=2A, IB=20mA, VCC=50V IC=2A, IB=20mA, VCC=50V Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 1200 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 364 ZDT1053 TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 IC/IB=10 IC/IB=30 IC/IB=100 +25C 0.8 0.6 0.4 0.2 IC/IB=30 -55C +25C +100C +175C 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 700 VCE=2V 600 500 400 300 200 100 1mA 10mA 1.0 IC/IB=30 +100C +25C 0.8 0.6 -55C +25C +100C +175C -55C 0.4 0.2 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current hFE v IC VBE(sat) v Ic 1.2 1.0 0.8 0.6 0.4 0.2 VCE=2V -55C +25C +100C +175C 1mA 10mA 100mA 1A 10A IC-Collector Current VBE(on) v IC 3 - 365 |
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